The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1873
2SA1873
Audio Frequency General Purpose Amplifier Applications
• Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)
= 0.95 (typ.) • Complementary to 2SC4944
Unit: mm
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
VCBO VCEO VEBO
IC IB PC (Note 1)
−50 −50 −5 −150 −30
200
V V V mA mA
mW
Junction temperature
Tj
125 °C
JEDEC
―
Storage temperature range
Tstg
−55~125
°C
JEITA
―
Note: Using continuously under heavy loads (e.g.