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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1887
High-Current Switching Applications
2SA1887
Unit: mm
• Low collector saturation voltage: VCE (sat) = −0.4 V (max) at IC = −5 A
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC
PC
Tj Tstg
Rating
−80 −50 −7 −10 2.0 25 150 −55 to 150
Unit V V V A
W
°C °C
Electrical Characteristics (Tc = 25°C)
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.
A1887 Datasheet
