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A1887 - 2SA1887

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Part number A1887
Manufacturer Toshiba
File Size 85.68 KB
Description 2SA1887
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1887 High-Current Switching Applications 2SA1887 Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) at IC = −5 A Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −80 −50 −7 −10 2.0 25 150 −55 to 150 Unit V V V A W °C °C Electrical Characteristics (Tc = 25°C) JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.
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