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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1987
Power Amplifier Applications
2SA1987
Unit: mm
• High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5359
• Recommended for 100-W high-fidelity audio frequency amplifier output stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
−230
V
Collector-emitter voltage
V CEO
−230
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−15
A
Base current
IB
−1.5
A
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
PC
180
W
Tj
150
°C
T stg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-21F1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.
A1987 Datasheet
