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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2061
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SA2061
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = −0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 40 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −20 V
Collector-emitter voltage
VCEO −20 V
Emitter-base voltage
VEBO −7 V
Collector current
Base current Collector power dissipation
DC Pulse
t = 10 s DC
IC ICP IB
PC (Note 1)
−2.5 −4 −250 1 0.625
A mA W
JEDEC JEITA TOSHIBA
― ― 2-3S1C
Junction temperature
Tj
150 °C
Weight: 0.01 g (typ.
A2061 Datasheet
