B1067
B1067 is 2SB1067 manufactured by Toshiba.
2SB1067
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
2SB1067
Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Industrial Applications Unit: mm
- High DC current gain: h FE = 2000 (min) (VCE =
- 2 V, IC =
- 1 A)
- Low saturation voltage: VCE (sat) =
- 1.5 V (max)
(IC =
- 1 A, IB =
- 1 m A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
Tj Tstg
- 80
- 80
- 8
- 2
- 0.5 1.5 10 150
- 55 to 150
V V V A A
°C...
