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2SB1067
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
2SB1067
Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Industrial Applications Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)
(IC = −1 A, IB = −1 mA)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
−80 −80 −8 −2 −0.5 1.5 10 150 −55 to 150
V V V A A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.
B1067 Datasheet
