BAS316
BAS316 is Silicon Epitaxial Planar Switching Diodes manufactured by Toshiba.
Switching Diodes Silicon Epitaxial Planar
1. Applications
- High-Speed Switching
2. Packaging and Internal Circuit
1: Cathode 2: Anode
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
Reverse voltage
Peak forward current
500 m A
Average rectified current
Non-repetitive peak forward surge current
IFSM
(Note 1)
Power dissipation
(Note 2)
230 m W
Junction temperature
Tj
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Measured with a 10 ms pulse. Note 2: Mounted on an FR4 board (20 mm × 20 mm, Cu pad: 4 mm × 4 mm)
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