BD233 - Silicon NPN Transistor

Toshiba

Key Features

. Designed for Complementary Use with BD234, BD236 and BD238 BD233 BD235 IBD237 7.9 MAX. Unit in mm.

BD233 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	BD233
Manufacturer	Toshiba
File Size	117.09 KB
Description	Silicon NPN Transistor
Datasheet	BD233 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
BD234	Silicon PNP Transistor
BD235	Silicon NPN Transistor
BD236	Silicon PNP Transistor
BD237	Silicon NPN Transistor
BD238	Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN EPITAXIAL BASE MESA TYPE AUDIO POWER AMPLIFIER APPLICATIONS. VERTICAL DEFLECTION OUTPUT APPLICATION IN TV. FEATURES . Designed for Complementary Use with BD234, BD236 and BD238 BD233 BD235 IBD237 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage BD233 BD235 BD237 Collector-Emitter Voltage BD233 BD235 BD237 Emitter-Base Voltage Collector Current DC Peak Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO Vebo IC ICM IB PC L stg RATING 45 60 100 45 60 80 25 150 -55-150 UNIT JEDEC 1. EMITTER 2. COLLECTOR (HEAT SINK) 3. BASE TO— 126 TOSHIBA Weight : 0.