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BT8227P - Low Frequency Power Amplifier

Key Features

  • High power : Pout = 2.5 W/CH (typ. ) (VCC = 9 V, RL = 4 Ω, f = 1 kHz, THD = 10%) Weight: 1.4 g (typ. ) : Pout = 3.0 W/CH (typ. ) (VCC = 9 V, RL = 3 Ω, f = 1 kHz, THD = 10%).
  • Voltage gain : Gv = 45.0dB (typ. ) (Rf = 120 Ω, f = 1 kHz) : Gv = 56.5dB (typ. ) (Rf = 0 Ω, f = 1 kHz).
  • Small quiescent current : ICCQ = 21 mA (typ. ) (VCC = 9 V, Vin = 0).
  • Ripple rejection ratio : R. R. =.
  • 52dB (typ. ) (VCC = 9 V, fripple = 100 Hz, Rg = 600 Ω).
  • Cross Talk : C. T. =.

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Datasheet Details

Part number BT8227P
Manufacturer Toshiba
File Size 299.79 KB
Description Low Frequency Power Amplifier
Datasheet download datasheet BT8227P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8227P Low Frequency Power Amplifier TA8227P is an audio power IC with built-in two channels developed for portable radio cassette tape recorder with power ON/OFF switch. Because of the parts reduction and DIP (Dual Inline Package), space merit is remarkable. Thermal shut down protection circuit is built in. Features · High power : Pout = 2.5 W/CH (typ.) (VCC = 9 V, RL = 4 Ω, f = 1 kHz, THD = 10%) Weight: 1.4 g (typ.) : Pout = 3.0 W/CH (typ.) (VCC = 9 V, RL = 3 Ω, f = 1 kHz, THD = 10%) · Voltage gain : Gv = 45.0dB (typ.) (Rf = 120 Ω, f = 1 kHz) : Gv = 56.5dB (typ.) (Rf = 0 Ω, f = 1 kHz) · Small quiescent current : ICCQ = 21 mA (typ.) (VCC = 9 V, Vin = 0) · Ripple rejection ratio : R.R. = −52dB (typ.