BU326A - Silicon NPN Transistor

Features

. High Voltage : V CBO=900V . High Peak Current Capability : Ic(Peak) =8A.
Fall Time : tf=0.5/»s (Max. ) . Glass Passivated Collector-Base Junction. 33 BU326A Unit in mm 025OMAX.

Toshiba

Datasheet Details

Part number	BU326A
Manufacturer	Toshiba
File Size	116.99 KB
Description	Silicon NPN Transistor
Datasheet	BU326A Datasheet
Additional preview pages of the BU326A datasheet.

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Full PDF Text Transcription

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: SILICON NPN TRIPLE DIFFUSED MESA TYPE HIGH POWER SWITCHING REGULATOR APPLICATIONS. FEATURES . High Voltage : V CBO=900V . High Peak Current Capability : Ic(Peak) =8A • Fall Time : tf=0.5/»s (Max.) . Glass Passivated Collector-Base Junction. 33 BU326A Unit in mm 025OMAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VcBO VCEO Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation (Tc=25°C) 'EBO ic ICP PC Junction Temperature Storage Temperature Range L stg RATING 900 400 60 150 -65-150 UNIT 1. BASE 2. EMITTER COLLECTOR (CASE) JEDEC EIAJ TOSHIBA TO— TC— 3, TB— 2-2 1B1A Mounting Kit No. AC42C Weight : 17.

Published: Jul 16, 2018 |