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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2510
2SC2510
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE)
l Specified 28V, 28MHz Characteristics
l Output Power
: Po = 150WPEP (Min.)
l Power Gain
: Gp = 12.2dB (Min.)
l Collector Efficiency
: ηC = 35% (Min.)
l Intermodulation Distortion: IMD = −30dB (Max.)
Unit in mm
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL
VCBO VCES VCEO VEBO
IC PC Tj Tstg
RATING
60 60 35 4 20 250 175 −65~175
UNIT
V V V V A W °C °C
JEDEC EIAJ TOSHIBA Weight: 5.
C2510 Datasheet
