C2655 - Silicon NPN Transistor

Toshiba

Datasheet Details

Part number	C2655
Manufacturer	Toshiba
File Size	148.31 KB
Description	Silicon NPN Transistor
Datasheet	C2655 Datasheet
Additional preview pages of the C2655 datasheet.

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Full PDF Text Transcription

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2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1020. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.5 A JEDEC TO-92MOD Collector power dissipation Junction temperature Storage temperature range PC 900 mW Tj 150 °C Tstg −55 to 150 °C JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.

Published: Aug 22, 2016 |