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2SC3225
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3225
Switching Applications Solenoid Drive Applications
Industrial Applications Unit: mm
• High DC current gain: hFE = 500 (min) (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 300 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
40 40 7 2 0.5 900 150 −55 to 150
Unit
V V V A A mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.
C3225 Datasheet
