C3515
C3515 is 2SC3515 manufactured by Toshiba.
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3515
2SC3515
HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
Unit: mm
- High voltage: VCBO = 300 V, VCEO = 300 V
- Low saturation voltage: VCE (sat) = 0.5 V (max)
- Small collector output capacitance: Cob = 3 p F (typ.)
- plementary to 2SA1384
- Small flat package
- PC = 1.0 to 2.0 W (mounted on ceramic substrate)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC PC (Note 1)
Tj Tstg
300 300
6 100 20 500
- 55 to 150
Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 mmt)
Unit V V V m A m A m W
°C °C
PW-MINI JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1 2002-08-13
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol...
