Datasheet Summary
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4539
Power Amplifier Applications Power Switching Applications
2SC4539
Unit: mm
- Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA)
- High speed switching time: tstg = 0.3 µs (typ.)
- Small flat package
- PC = 1.0 to 2.0 W (mounted on ceramic substrate)
- plementary to 2SA1743
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
Collector power dissipation
VCBO VCEO VEBO
IC IB PC PC
(Note)
50 30 6 1.2 0.3 500
Junction temperature Storage temperature range
Tj 150...