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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4935
Power Amplifier Applications
2SC4935
Unit: mm
• Good hFE linearity
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage Collector current Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
VEBO IC IB
PC
5V 3A 0.3 A 2
W 10
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-67
temperature/current/voltage and the significant change in
TOSHIBA
2-10R1A
temperature, etc.
C4935 Datasheet
