• Part: C5200
  • Description: Silicon NPN Transistor
  • Manufacturer: Toshiba
  • Size: 179.69 KB
Download C5200 Datasheet PDF
C5200 page 2
Page 2
C5200 page 3
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Datasheet Summary

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm - High breakdown voltage: VCEO = 230 V (min) - plementary to 2SA1943 - Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB Tj Tstg Rating Unit °C - 55 to 150 °C Electrical Characteristics (Tc = 25°C) http://..net/ JEDEC ― JEITA ―...
C5200 reference image

Representative C5200 image (package may vary by manufacturer)