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C5356 - 2SC5356

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Part number C5356
Manufacturer Toshiba
File Size 185.93 KB
Description 2SC5356
Datasheet download datasheet C5356 Datasheet
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 2SC5356 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tf = 0.5 μs (max) (IC = 1.2 A) • High collectors breakdown voltage: VCEO = 800 V • High DC current gain: hFE = 15 (min) (IC = 0.15 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 900 800 7 3 5 1 1.5 25 150 −55 to 150 V V V A A W °C °C Note: Using continuously under heavy loads (e.g.
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