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C5460 - 2SC5460

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Datasheet Details

Part number C5460
Manufacturer Toshiba
File Size 126.30 KB
Description 2SC5460
Datasheet download datasheet C5460 Datasheet
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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications 2SC5460 Unit: mm • High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation Ta = 25°C Tc = 25°C PC 1.5 W 10 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-8H1A Weight: 0.82 g (typ.
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