Datasheet Summary
Schottky Barrier Diode Silicon Epitaxial
1. Applications
- High-Speed Switching
2. Features
(1) Low forward voltage: VF(1) = 0.33 V (typ.)
3. Packaging and Internal Circuit
1: Cathode 2: Anode
CST2C
4....
- Part: CCS15S30
- Description: Schottky Barrier Diode
- Manufacturer: Toshiba
- Size: 137.13 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| CCS15S40 | Schottky Barrier Diode |