CLS10F40 - Schottky Barrier Diode

Toshiba

Datasheet Details

Part number	CLS10F40
Manufacturer	Toshiba
File Size	196.34 KB
Description	Schottky Barrier Diode
Datasheet	CLS10F40 Datasheet
Additional preview pages of the CLS10F40 datasheet.

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Schottky Barrier Diode Silicon Epitaxial CLS10F40 1. Applications • Low-Voltage High-Speed Switching 2. Packaging and Internal Circuit CLS10F40 1: Cathode 2: Anode CL2E 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Rating Unit Reverse voltage VR 40 V Average rectified current IO (Note 1) 1.0 A Non-repetitive peak forward surge current IFSM (Note 2) 10 A Junction temperature Tj 150 � Storage temperature Tstg -55 to 150 � Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

Published: Jul 19, 2023 |