CLS10F40 Datasheet | Toshiba

Schottky Barrier Diode Silicon Epitaxial 1. Applications - Low-Voltage High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CL2E 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 - ) Characteristics Symbol Note Rating Unit Reverse voltage Average rectified current IO (Note 1) Non-repetitive peak forward surge current IFSM (Note 2) Junction temperature Tj - Storage temperature Tstg -55 to 150 - Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Note 2: Pulse width 10 ms ©2018-2023 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2018-10 2023-02-28 Rev.4.0 4. Electrical Characteristics (Unless otherwise specified, Ta = 25 - ) Characteristics Forward voltage Reverse current Total capacitance Note 1: Pulse measurement. Symbol...