CMZB330 Datasheet | Toshiba

CMZB100 to CMZB390 TOSHIBA Zener Diode Silicon Junction CMZB100 to CMZB390 ○ munication, Control and Measurement Equipment ○ Constant Voltage Regulation - Power dissipation: P = 1 W - Zener voltage: VZ = 100 to 390 V - Suitable for high-density board assembly due to the use of a small surface-mount package, M- FLATTM Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Power dissipation 1 (Note 1) W Junction temperature Tj °C Storage temperature range Tstg - 55 to 150 °C 1. Anode Note : Using continuously under heavy loads (e.g. 2. Cathode the application of high temperature/current/voltage and the JEDEC ― significant change in temperature, etc.) may JEITA ― cause this product to decrease in the reliability significantly even if the operating TOSHIBA 3-4E1S conditions (i.e. operating temperature / Weight: 0.023 g (typ.) current / voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ta = 40°C Device mounted on a glass-epoxy board Board size: 50 mm × 50 mm Land pattern: 6 mm × 6 mm Board thickness: 1.6 mm Land Pattern Dimensions (for reference only) Unit: mm 2....