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CRS10I30C - Schottky Barrier Diode

Key Features

  • (1) Peak forward voltage: VFM = 0.36 V (max) @IFM = 1 A (2) Average forward current: IF(AV) = 1 A (3) Repetitive peak reverse voltage: VRRM = 30 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packaging and Internal Circuit CRS10I30C 1: Anode 2: Cathode 3-2A1S 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage VRRM 30 V Average forward curre.

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Datasheet Details

Part number CRS10I30C
Manufacturer Toshiba
File Size 170.18 KB
Description Schottky Barrier Diode
Datasheet download datasheet CRS10I30C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode CRS10I30C 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features (1) Peak forward voltage: VFM = 0.36 V (max) @IFM = 1 A (2) Average forward current: IF(AV) = 1 A (3) Repetitive peak reverse voltage: VRRM = 30 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packaging and Internal Circuit CRS10I30C 1: Anode 2: Cathode 3-2A1S 4.