CTS05S30 Datasheet | Toshiba

Schottky Barrier Diode Silicon Epitaxial 1. Applications - High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage 30 V Reverse voltage VR 20 Average rectified current IO (Note 1) Non-repetitive peak forward surge current IFSM (Note 2) Junction temperature Tj 125  Storage temperature Tstg -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Note 2: Measured with a 10 ms pulse. Start of mercial production 2013-07 1 2014-04-04 Rev.3.0 4. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Forward voltage Forward voltage Reverse current Reverse current Total capacitance Symbol Test Condition VF(1) VF(2) IR(1) IR(2) Ct IF = 0.1 A (Pulse test) IF = 0.5 A (Pulse test) VR = 10 V (Pulse test) VR = 30 V (Pulse test) VR = 0 V, f = 1...