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Schottky Barrier Diode Silicon Epitaxial
CUHS20S30
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
CUHS20S30
1: Cathode 2: Anode
US2H
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Reverse voltage
VR 30 V
Average rectified current
IO (Note 1)
2
A
Non-repetitive peak forward surge current
IFSM (Note 2)
10
A
Junction temperature
Tj 150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.
CUHS20S30 Datasheet
