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2SD2385
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2385
Power Amplifier Applications
Unit: mm
· High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1556
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
Unit
140
V
140
V
5
V
8
A
0.1
A
120
W
150
°C
−55 to 150
°C
Equivalent Circuit
COLLECTOR
BASE
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.
D2385 Datasheet
