D2385
2SD2385
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2385
Power Amplifier Applications
Unit: mm
- High breakdown voltage: VCEO = 140 V (min)
- plementary to 2SB1556
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
Tj Tstg
Rating
Unit
°C
- 55 to 150
°C
Equivalent Circuit
COLLECTOR
BASE
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
≈ 100 Ω
EMITTER
2003-02-04
2SD2385
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test...
