D2414
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2414(SM)
2SD2414(SM)
High Current Switching Applications Power Amplifier Applications
Unit: mm
- Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
Tj Tstg
Rating
100 80 5 7 1 1.5 40 150
- 55 to 150
Unit V V V A A
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-10S2
Weight: 1.4 g (typ.)
1 2003-02-04
2SD2414(SM)
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Turn-on...
