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DF2S14P2CTC - ESD Protection Diodes

Key Features

  • (1) Suitable for use with a 12 V signal line. (VRWM ≤ 12.6 V) (2) Protects devices with its high ESD performance. (VESD = ±30 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.08 Ω (typ. )) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 28 V@IPP = 50 A (typ. )) (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (1.6.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESD Protection Diodes Silicon Epitaxial Planar DF2S14P2CTC DF2S14P2CTC 1. General The DF2S14P2CTC is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. The DF2S14P2CTC has realized high IPP, in order to protect a semiconductor devices from the indirect lightning stroke and the transition voltage (at the time of power activation). Furthermore, the DF2S14P2CTC is housed in an ultra-compact package (1.6 mm × 0.8 mm) to meet applications that require a small footprint. 2.