DF2S23P2FU
Features
(1) Suitable for use with a 20 V signal line. (VRWM ≤ 21 V) (2) Protects devices with its high ESD performance.
(VESD = ±30 k V (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise.
(RDYN = 0.13 Ω (typ.)) (4) Low clamping voltage characteristic protects semiconductor devices from static electricity and noise.
(VC = 30 V@IPP = 14 A (typ.)) (5) pact package is suitable for use in high density board layouts such as in mobile devices.
(2.5 mm × 1.25 mm size (Nickname: USC))
4. Packaging
©2017-2018 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2018-08
2018-08-07 Rev.2.0
5. Example of Circuit Diagram
6. Quick Reference Data
Characteristics
Symbol Note
Test Condition
Min Typ. Max Unit
Working peak reverse voltage
Dynamic resistance
Electrostatic discharge voltage (IEC61000-4-2) (Contact)
VRWM RDYN VESD
(Note 1) (Note 2) (Note 3)
21 0.13 ...
