Datasheet4U Logo Datasheet4U.com

DF2S8.2ASL - ESD Protection Diode

📥 Download Datasheet

Datasheet preview – DF2S8.2ASL

Datasheet Details

Part number DF2S8.2ASL
Manufacturer Toshiba
File Size 339.60 KB
Description ESD Protection Diode
Datasheet download datasheet DF2S8.2ASL Datasheet
Additional preview pages of the DF2S8.2ASL datasheet.

📁 Similar Datasheet

  • DF2S12FU - Diode (Toshiba Semiconductor)
  • DF2S24FS - ESD Protection Diodes (Toshiba Semiconductor)
  • DF2S24UCT - ESD Protection Diodes (Toshiba Semiconductor)
  • DF2S5M4SL - ESD Protection Diodes (Toshiba Semiconductor)
  • DF2S6.2FS - Diodes for Protecting against ESD (Toshiba Semiconductor)
  • DF2S6.8FS - ESD Protection Diodes (Toshiba Semiconductor)
  • DF2S6.8S - Diodes for Protecting against ESD (Toshiba Semiconductor)
  • DF2S6.8S - ESD Protection Diodes (Toshiba Semiconductor)
  • DF2S6.8UCT - ESD Protection Diodes (Toshiba Semiconductor)
  • DF2S6.8UFS - ESD Protection Diodes (Toshiba Semiconductor)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
ESD Protection Diodes Silicon Epitaxial Planar DF2S8.2ASL DF2S8.2ASL 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Packaging and Internal Circuit 1: Cathode 2: Anode SL2 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) Electrostatic discharge voltage (IEC61000-4-2)(Air) VESD (Note 1) ±30 kV Peak pulse power(tp = 8/20 µs) Peak pulse current(tp = 8/20 µs) Junction temperature Storage temperature PPK IPP (Note 2) Tj Tstg 55 2.
Published: |