Datasheet4U Logo Datasheet4U.com

DSR01S30SL - Schottky Barrier Diode

Key Features

  • (1) Low reverse current: IR = 0.7 µA (max) @ VR = 30 V 3. Packaging and Internal Circuit DSR01S30SL 1: Cathode 2: Anode SL2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 30 V Peak forward current IFM 200 mA Average rectified current IO (Note 1) 100 mA Non-repetitive peak forward surge current IFSM (Note 2) 2 A Junction temperature Tj 125  Storage temperature Tstg -55 to 125  Note:.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DSR01S30SC Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor
DSR0.3A Rectifiers LGE
DSR0.3A SURFACE MOUNT RECTIFIER DIODES Sunmate
DSR0.3A Surface Mount Standard Rectifiers MDD
DSR0.3B Rectifiers LGE

Other Datasheets by Toshiba

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Schottky Barrier Diode Silicon Epitaxial DSR01S30SL 1. Applications • High-Speed Switching 2. Features (1) Low reverse current: IR = 0.7 µA (max) @ VR = 30 V 3. Packaging and Internal Circuit DSR01S30SL 1: Cathode 2: Anode SL2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 30 V Peak forward current IFM 200 mA Average rectified current IO (Note 1) 100 mA Non-repetitive peak forward surge current IFSM (Note 2) 2 A Junction temperature Tj 125  Storage temperature Tstg -55 to 125  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.