GT30J122A Datasheet Silicon N-Channel IGBT

Manufacturer: Toshiba

Overview: Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note: The product(s) described herein should not be used for any other application. 2.

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Datasheet Details

Part number	GT30J122A
Manufacturer	Toshiba
File Size	193.44 KB
Description	Silicon N-Channel IGBT
Download	GT30J122A Download (PDF)

Key Features

(1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.20 µs (typ. ) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.7 V (typ. ) (IC = 50 A) 3. Packaging and Internal Circuit GT30J122A TO-3P(N) 1 : Gate 2 : Collector 3 : Emitter Start of commercial production 2010-06 1 2014-01-07 Rev.2.0 GT30J122A 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collecto.

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Brand Logo	Part Number	Description	Manufacturer
	GT30J122	Silicon N-Channel IGBT	Toshiba Semiconductor

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