Datasheet Summary
Discrete IGBTs Silicon N-Channel IGBT
1. Applications
- Dedicated to Current-Resonant Inverter Switching Applications
- Dedicated to Partial-Switching Power Factor Correction (PFC) Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.20 µs (typ.) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A)
3. Packaging and Internal Circuit
TO-3P(N)
1 : Gate 2 : Collector 3 : Emitter
Start of mercial production
2010-06
2014-01-07
Rev.2.0
4....
