Datasheet4U Logo Datasheet4U.com

GT30J122A - Silicon N-Channel IGBT

Features

  • (1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.20 µs (typ. ) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.7 V (typ. ) (IC = 50 A) 3. Packaging and Internal Circuit GT30J122A TO-3P(N) 1 : Gate 2 : Collector 3 : Emitter Start of commercial production 2010-06 1 2014-01-07 Rev.2.0 GT30J122A 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collecto.

📥 Download Datasheet

Datasheet preview – GT30J122A

📁 Similar Datasheet

  • GT30J122 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT30J121 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT30J127 - 600V 200A IGBT MOSFET (ETC)
  • GT30J101 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT30J301 - N-Channel IGBT (Toshiba Semiconductor)
  • GT30J311 - N-Channel IGBT (Toshiba Semiconductor)
  • GT30J322 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT30J324 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT30 - Programmable Display (NAiS)
  • GT301L - Capacitive Touch Sensor (GreenChip)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.20 µs (typ.) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A) 3. Packaging and Internal Circuit GT30J122A TO-3P(N) 1 : Gate 2 : Collector 3 : Emitter Start of commercial production 2010-06 1 2014-01-07 Rev.2.0 GT30J122A 4.
Published: |