Toshiba GT50MR21
silicon N-channel IGBT
| Part No. | GT50MR21 |
|---|---|
| Datasheet | GT50MR21 Download |
| Manufacturer |  Toshiba |
| Description | silicon N-channel IGBT |
| Buy | Stock & Price |
APPLICATIONS
● Dedicated to Voltage-Resonant Inverter SwitchingAPPLICATIONS
The product(s) described herein should not be used for any other application. Note: 2.FEATURES
(1) (2) (3) (4) 6.5th generation The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. Enhancement mode High-speed switching IGBT : tf = 0.18 µs (typ.) (IC = 50 A) FWD : trr = 0.45 µs (typ.) (IF = 15 A) (5) (6) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-3P(N) 1 2011-06-10 Rev.1.0 GT50MR21 4.ABSOLUTE MAXIMUM RATINGS
(Note) (Ta = 25, unless otherwise specified) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (1 ms) Diode forward current (DC) Diode forward current (100 µs) Collector power dissipation Junction temperature Storage temperature Mounting torque (Tc = 25) (Note 1) Symbol VCES VGES IC ICP...
