• Part: GT8G151
  • Description: Silicon N-Channel IGBT
  • Manufacturer: Toshiba
  • Size: 269.51 KB
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Datasheet Summary

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Strobe Flash Applications - Enhancement-mode - Low gate drive voltage: VGE = 2.5 V (min.) (@IC = 150 A) - Peak collector current: IC = 150 A (max) - pact and Thin (TSON-8)...