HN1B01FU
HN1B01FU is Silicon PNP/NPN Epitaxial Type Transistor manufactured by Toshiba.
Bipolar Transistors Silicon PNP/NPN Epitaxial Type
1. Applications
- Low-Frequency Amplifiers
2. Q1 Features
(1) High voltage: VCEO = -50 V (2) High collector current: IC = -150 mA (max) (3) High hFE: hFE = 120 to 400 (4) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)
3. Q2 Features
(1) High voltage: VCEO = 50 V (2) High collector current: IC = 150 mA (max) (3) High hFE: hFE = 120 to 400 (4) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
4. Q1, Q2 mon Features
(1) AEC-Q101 qualified (Please see the orderable part number list)
5. Packaging and Internal Circuit
US6
1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5:...
