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HN1B01FU - Silicon PNP/NPN Epitaxial Type Transistor

Key Features

  • (1) High voltage: VCEO = -50 V (2) High collector current: IC = -150 mA (max) (3) High hFE: hFE = 120 to 400 (4) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ. ) 3. Q2 Features (1) High voltage: VCEO = 50 V (2) High collector current: IC = 150 mA (max) (3) High hFE: hFE = 120 to 400 (4) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ. ) 4. Q1, Q2 Common Features (1) AEC-Q101 qualified (Please see the orderable part number list) 5. Packaging and Int.

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Datasheet Details

Part number HN1B01FU
Manufacturer Toshiba
File Size 597.33 KB
Description Silicon PNP/NPN Epitaxial Type Transistor
Datasheet download datasheet HN1B01FU Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon PNP/NPN Epitaxial Type HN1B01FU 1. Applications • Low-Frequency Amplifiers 2. Q1 Features (1) High voltage: VCEO = -50 V (2) High collector current: IC = -150 mA (max) (3) High hFE: hFE = 120 to 400 (4) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 3. Q2 Features (1) High voltage: VCEO = 50 V (2) High collector current: IC = 150 mA (max) (3) High hFE: hFE = 120 to 400 (4) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 4. Q1, Q2 Common Features (1) AEC-Q101 qualified (Please see the orderable part number list) 5.