HN3C56FU
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Audio Frequency General Purpose Amplifier Applications
Unit: mm z Small package (dual type) z High voltage and high current z High h FE z Excellent h FE linearity
: VCEO = 50V, IC = 150m A (max) : h FE = 120 to 400 : h FE (IC = 0.1m A) / (IC = 2m A)
= 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 mon)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
VCEO VEBO
IC IB PC-
150 m A
30 m A
200 m W
1.COLLECTOR1 (C1)
2.EMITTER1
(E2)
3.COLLECTOR2 (C2)
4.EMITTER2
(E2)
5.BASE2
(B2)
6.BASE1
(B1)
Junction temperature
Tj
°C
Storage temperature range
Tstg
- 55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to...
