HN4A56JU - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	HN4A56JU
Manufacturer	Toshiba
File Size	218.15 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	HN4A56JU Datasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A56JU HN4A56JU Audio Frequency General Purpose Amplifier Applications Unit: mm z Small Package (Dual Type) z High Voltage and High Current : VCEO= −50V, IC = −150mA (max) z High hFE z Excellent hFE Linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current VCBO VCEO VEBO IC −50 V −50 V −5 V −150 mA 1.EMITTER1 (E1) 2.BASE (B) 3.EMITTER2 (E2) 4.COLLECTOR2 (C2) 5.