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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1530
2SK1530
High-Power Amplifier Application
High breakdown voltage High forward transfer admittance Complementary to 2SJ201
: VDSS = 200V : |Yfs| = 5.0 S (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Gate−source voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Symbol
VDSS VGSS
ID PD Tc Tstg
Rating
200 ±20 12 150 150 −55~150
Marking
Unit
V V A W °C °C
TOSHIBA 2SK1530
JAPAN
Part No. (or abbreviation code)
Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.
K1530 Datasheet
