K170
K170 is FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier) manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK170
2SK170
Low Noise Audio Amplifier Applications
Unit: mm
- Remended for first stages of EQ and M.C. head amplifiers.
- High |Yfs|: |Yfs| = 22 m S (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 m A)
- High breakdown voltage: VGDS =
- 40 V
- Low noise: En = 0.95 n V/Hz1/2 (typ.)
(VDS = 10 V, ID = 1 m A, f = 1 k Hz)
- High input impedance: IGSS =
- 1 n A (max) (VGS =
- 30 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
- 40 10 400 125
- 55~125
Unit
V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TC-92
JEITA
SC-43
TOSHIBA...
