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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1826
High Speed Switching Applications Analog Switch Applications
· 4 V gate drive · Low threshold voltage: Vth = 0.8~2.5 V · High speed · Enhancement-mode · Small package
Marking
Equivalent Circuit
2SK1826
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
VDS VGSS
ID PD Tch Tstg
50 10 50 200 150 -55~150
Note: This transistor is electrostatic sensitive device. Please handle with caution.
Unit
V V mA mW °C °C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.
K1826 Datasheet
