The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK1875
High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
2SK1875
Unit: mm
· High |Yfs|: |Yfs| = 25 mS (typ.) · Low Ciss: Ciss = 7.5 pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-20 10 100 125 -55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.
K1875 Datasheet
