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TK20A60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK20A60U
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
Rating
600 ±30 20 40 45
144
20 4.
K20A60U Datasheet
