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2SK2717
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2717
DC−DC Converter and Motor Drive Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.)
l High forward transfer admittance : |Yfs| = 4.4 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 720 V)
l Enhancement−mode
: Vth = 2.0~4.
K2717 Datasheet
