• Part: K2750
  • Description: Silicon N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Toshiba
  • Size: 677.00 KB
Download K2750 Datasheet PDF
Toshiba
K2750
2SK2750 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSV) 2SK2750 Chopper Regulator, DC- DC Converter and Motor Drive Applications z Low drain- source ON resistance z High forward transfer admittance : RDS (ON) = 1.7 Ω (typ.) : |Yfs| = 3.0 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 m A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 3.5 14 35 201 3.5 3.5 150 - 55~150 Unit V V V A A W m J A m J °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA - SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the...