• Part: K2777
  • Description: 2SK2777
  • Manufacturer: Toshiba
  • Size: 443.28 KB
Download K2777 Datasheet PDF
Toshiba
K2777
2SK2777 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-- MOSV) 2SK2777 Chopper Regulator, DC- DC Converter and Motor Drive Applications z Low drain- source ON resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD IAR EAR Tch Tstg 600 600 ±30 6 24 65 6 6.5 150 - 55 to 150 V V V A A W m J A m J °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the...