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K3397. For precise diagrams, and layout, please refer to the original PDF.
2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications z z Low drain-s...
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DC-DC Converter Applications Motor Drive Applications z z Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Unit: mm z Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) www.DataSheet4U.com z Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 70 210 125 273 70 12.
K3397 Datasheet
