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2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3497
High Power Amplifier Application
Unit: mm
High breakdown voltage: VDSS = 180V Complementary to 2SJ618
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
180
Gate−source voltage
VGSS
±12
Drain current
DC (Note ) Pulse (Note )
ID IDP
10 30
Drain power dissipation (Tc = 25°C)
PD
130
Channel temperature
Tch 150
Storage temperature range
Tstg −55~150
Note: Ensure that the channel temperature does not exceed 150°C.
V V A A W °C °C
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient
Symbol Rth (ch−c) Rth (ch−a)
Max 0.96 50
Unit °C / W °C / W
1. GATE 2.
K3497 Datasheet
