K3497 Overview
2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: Ensure that the channel temperature does not exceed 150°C.
Datasheet Details
| Part number | K3497 |
|---|---|
| Datasheet | K3497-Toshiba.pdf |
| File Size | 221.96 KB |
| Manufacturer | Toshiba |
| Description | 2SK3497 |
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