Datasheet Summary
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2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSV)
2SK3497
High Power Amplifier Application
Unit: mm
High breakdown voltage: VDSS = 180V plementary to 2SJ618
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain- source voltage
VDSS
Gate- source voltage
VGSS
±12
Drain current
DC (Note ) Pulse (Note )
ID IDP
10 30
Drain power dissipation (Tc = 25°C)
Channel temperature
Tch 150
Storage temperature range
Tstg
- 55~150
Note: Ensure that the channel temperature does not exceed 150°C.
V V A A W °C °C
Thermal Characteristics...