K4106 Overview
2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance:.
K4106 datasheet by Toshiba.
| Part number | K4106 |
|---|---|
| Datasheet | K4106_Toshiba.pdf |
| File Size | 194.45 KB |
| Manufacturer | Toshiba |
| Description | 2SK4106 |
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2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance:.
| Part Number | Description |
|---|---|
| K4110 | 2SK4110 |
| K4111 | 2SK4111 |
| K4112 | Field Effect Transistor |
| K4113 | Field Effect Transistor Silicon N Channel MOS Type |