The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TK5A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK5A60D
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Ф3.2 ± 0.2 10 ± 0.3 A 3.9 3.0
Unit: mm
2.7 ± 0.2
1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 5 20 35 189 5 3.5 150 −55 to 150 A W mJ A mJ °C °C Unit V V
0.64 ± 0.15 0.69 ± 0.15 Ф0.2 M A 2.54
15.0 ± 0.
K5A60D Datasheet
