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K5A65D - TK5A65D

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  • , medical equipment, equipment used for autom.

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Other Datasheets by Toshiba

Part Number Description
K5A60D TK5A60D

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TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK5A65D Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain-source voltage Gate-source voltage Drain current DC (Note Pulse (Note 1) 1) ymbol VDSS VGSS ID IDP PD EAS 180 IAR 5 EAR 4.