K880 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 2SK880 Audio Frequency Low Noise Amplifier Applications - High |Yfs|: |Yfs| = 15 m S (typ.) at VDS = 10 V, VGS = 0 - High breakdown voltage: VGDS = - 50 V - Low noise: NF = 1.0d B (typ.) at VDS = 10 V, ID = 0.5 m A, f = 1 k Hz, RG = 1 kΩ - High input impedance: IGSS = - 1 n A (max) at VGS = - 30 V - Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -50 10 100 125 -55~125 Unit V m A m W °C °C Marking Unit: mm JEDEC ― JEITA SC-70 TOSHIBA 2-2E1B Weight: 0.006 g...